Postdoctoral Appointee - Microelectronics Research
- Argonne National Laboratory
- Location: Lemont, IL
- Job Number: 7086024
- Posting Date: Sep 23, 2021
- Application Deadline: Open Until Filled
Job DescriptionFive (5) postdoctoral positions at Argonne National Laboratory for microelectronics research
As part of a planned expansion in research activities in microelectronics at Argonne National Laboratory, in partnership with universities and industry, we have five (5) post-doctoral positions open for carrying out fundamental and multidisciplinary research on new materials discovery and algorithmic/architectural approaches that can inform them; for new ultra-dense digital memories, and fast synaptic memory for neuromorphic applications. This is part of a Department of Energy funded project that includes Purdue University as a partner, and IBM and Applied Materials as industrial collaborators.
The PIs in this project cover a range of multidisciplinary expertise from materials science (S. Guha, CD Phatak, G. Galli, D. Fong) and devices (K. Roy, S.Guha), circuits and architectures (Roy, Raghunathan) and algorithms (P. Beckmann). In addition to working with them in a team environment and in the spirit of co-design, the positions allow the opportunity to work with a large number of other researchers within the Argonne, University of Chicago, and Purdue research ecosystems. Research facilities at both Argonne and the University of Chicago will be available to all the postdoctoral scientists. The descriptions of the specific positions are listed below. We encourage applicants who are in interested in acquiring a multidisciplinary approach to microelectronics research. In your application please denote the specific positions(s) you are interested in. We seek candidates who have recently received their Ph.D. degrees (within the last three years), or are expecting to graduate soon. Candidates should have excellent verbal and communications skills.
These appointments are term appointments that may be renewed on an annual basis for up to three years.
1. In-situ electron microscopy of microelectronic device heterostructures (Materials Science Division): We seek a candidate with experience in semiconducting and oxide materials, and their characterization using advanced high resolution transmission electron microscopy (STEM, HR-TEM, and compositional mapping (EDX/EELS). The candidate will be part of a highly interdisciplinary project focused on developing a fundamental understanding of novel oxide based synaptic memory as well as investigate effects of defects and interfaces using in-situ TEM approaches. A strong experimental and theoretical background in conducting in-situ electrical transport measurements, or familiarity with electrical transport measurements of semiconductors is highly desirable but not necessary. The work will involve fabrication of suitable sample geometries for understanding electrical transport behavior of oxides, and semiconductor materials using state-of-the-art facilities at Center for Nanoscale Materials, Argonne National Laboratory. Experience with thin film deposition, nanofabrication and patterning of devices is also desirable. The synthesis of bulk materials, first-principles simulations/modeling, and organic or bio-related areas are not in consideration for this position.
The candidate should have a Ph.D in materials science/condensed matter physics/applied physics or related field. The position will be under the supervision of Dr. C.D. Phatak. https://www.anl.gov/profile/charudatta-m-phatak
2. In-operando X-ray studies of heterostructures for advanced memory (Materials Science Division): We seek a candidate with experience in synchrotron X-ray scattering / spectroscopy and thin film deposition. This post-doctoral scientist will be part of a collaborative effort focused on the discovery science needed for the development of new memory technologies, as well as the investigation and identification of defects and microstructural features that can act as electronically or optically addressed memory elements. The research will involve the epitaxial growth of oxide thin film heterostructures and their characterization by in-situ / operando synchrotron X-ray methods at the Advanced Photon Source at Argonne. The successful candidate should have a good understanding numerical methods for data analysis.
This position requires a PhD in materials science, condensed matter physics, or a related field. The position will be under the supervision of Dr. Dillon Fong. https://www.anl.gov/profile/dillon-d-fong
3. Computational materials science for the study of quantum materials for microelectronic applications (Materials Science Division): Excellent candidates with a background in solid-state chemistry/physics and first-principles simulations of materials, in particular calculation of excited state properties, are invited to apply. Major duties and responsibilities include the use of advanced electronic structure methods and quantum simulations to model and predict the properties of complex, heterogeneous insulators and semiconductors for the realization of novel microelectronic devices for high density memory.
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