Postdoctoral Appointee - New Oxide Heterostructures for Ultra-Dense and Synaptic Memory (Term)
- Argonne National Laboratory
- Location: Argonne, IL
- Job Number: 7109288 (Ref #: 414030)
- Posting Date: Aug 30, 2022
- Application Deadline: Open Until Filled
The Materials Science Division seeks candidates with a background in semiconductor and oxide heterostructure research and a strong interest in microelectronics research. Experience with thin film deposition of semiconductors or oxides and the electrical characterization of semiconductor devices is essential. Expertise with ultra-high vacuum, molecular beam epitaxy, atomic layer deposition and sputter deposition is highly desirable, as is experience with cleanroom-based semiconductor fabrication techniques and device processing.
The post-doctoral scientist will carry out research on new oxide based heterostructures that can have:
(I) Highly controllable programmable resistances for near analog synaptic devices and operation for cross-bar arrays
(II) Structures for 3-D digital memory that can achieve DNA class densities. The research will involve materials design and synthesis using MBE and other deposition techniques, fabrication of test device structures and their electrical characterization.
The research will involve close collaboration with the theory and characterization groups, as well as with device engineers.
Ph.D. degree level with 0 to 3 years of experience or equivalent in materials science, applied physics or a related field is essential.
The position will be under the supervision of Supratik Guha. More information about his group may be found in https://guha-lab.pme.uchicago.edu/
Job FamilyPostdoctoral Family
Job ProfilePostdoctoral Appointee
Worker TypeLong-Term (Fixed Term)
Time TypeFull time
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